Table of Contents

Historical Perspective (H. Hughes).

Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.).

Radiation-Induced Interface Traps (P. Winokur).

Radiation Effects on MOS Devices and Circuits (P.Dressendorfer).

Radiation-Hardening Technology (P. Dressendorfer).

Process-Induced Radiation Effects (T. Ma).

Source Considerations and Testing Techniques (K. Kerris).

Transient-Ionization and Single-Event Phenomena (S. Kerns).

Index.

About the Author

T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.